English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/435 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 2.7 V |
| 宽容: | ±1% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 1.5 kOhms |
| 电流 - 反向泄漏@ vr: | 500 nA @ 1 V |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
| 工作温度: | -65°C ~ 175°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AH, DO-35, Axial |
| 供应商设备包: | DO-35 (DO-204AH) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZX85C18 A0GTSC (Taiwan Semiconductor) |
DIODE ZENER 18V 1.3W DO204AL |
|
PLZ36B-G3/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 500MW DO219AC |
|
1N4755CPE3/TR12Roving Networks / Microchip Technology |
DIODE ZENER 43V 1W DO204AL |
|
KDZVTFTR22BROHM Semiconductor |
DIODE ZENER 22V 1W PMDU |
|
1N5278BDO35TRMicrosemi |
DIODE ZENER 170V 500MW DO35 |
|
BZT52B68-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 68V 410MW SOD123 |
|
BZD17C4V7P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 800MW DO219AB |
|
SZBZX84C12LT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 12V 250MW SOT23-3 |
|
MMBZ4696-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 350MW SOT23-3 |
|
SMBJ5939BE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 39V 2W SMBJ |
|
1N969BRochester Electronics |
DIODE ZENER 22V 500MW DO35 |
|
BZG03C36-HM3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 1.25W DO214AC |
|
1N758A TR TIN/LEADCentral Semiconductor |
DIODE ZENER 10V 500MW DO35 |
