English
简体中文
RES 820 OHM 20% 3/4W 2010
DIODE ZENER 56V 1W DO41
RES 56.9K OHM 0.25% 1/10W 0805
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/115 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 56 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 110 Ohms |
| 电流 - 反向泄漏@ vr: | 10 µA @ 42.6 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -55°C ~ 175°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
KDZLVTR110ROHM Semiconductor |
DIODE ZENER 110V 1W PMDU |
|
BZT52-C4V7,118Rochester Electronics |
ZENER DIODE |
|
JANTXV1N3020BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 10V 1W DO213AB |
|
BZT52H-B20,115Nexperia |
DIODE ZENER 20V 375MW SOD123F |
|
CZRA4754-GComchip Technology |
DIODE ZENER 39V 1W DO214AC |
|
BZT52C6V8-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 410MW SOD123 |
|
BZX585-C3V6,135Nexperia |
DIODE ZENER 3.6V 300MW SOD523 |
|
SMAJ5924CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 9.1V 3W DO214AC |
|
SMAJ4733E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 2W DO214AC |
|
JAN1N4126UR-1Roving Networks / Microchip Technology |
DIODE ZENER 51V DO213AA |
|
BZT52-B3V3XNexperia |
DIODE ZENER 3.3V 590MW SOD123 |
|
MMSZ5241C-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 500MW SOD123 |
|
MMSZ5255B-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 28V 500MW SOD123 |