English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/115 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 10 V |
| 宽容: | ±1% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 7 Ohms |
| 电流 - 反向泄漏@ vr: | 25 µA @ 7.6 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -55°C ~ 175°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JANTX1N3024D-1Roving Networks / Microchip Technology |
DIODE ZENER 15V 1W DO41 |
|
TZMC4V3-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 500MW SOD80 |
|
BZX384C15-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 200MW SOD323 |
|
1N4735A BK PBFREECentral Semiconductor |
DIODE ZENER 6.2V 1W DO41 |
|
1SMB5935 R5GTSC (Taiwan Semiconductor) |
DIODE ZENER 27V 3W DO214AA |
|
1PMT4124C/TR7Roving Networks / Microchip Technology |
DIODE ZENER 43V 1W DO216 |
|
GDZ5V1B-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 200MW SOD323 |
|
NTE5232AKNTE Electronics, Inc. |
DIODE ZENER 200V 10W DO4 |
|
1N5266BNTE Electronics, Inc. |
DIODE ZENER 68V 500MW |
|
BZX384C68-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 68V 200MW SOD323 |
|
1PGSMA4764HR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 100V 1.25W DO214AC |
|
SMAJ4759AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 62V 2W DO214AC |
|
1N3340BSolid State Inc. |
DIODE ZENER 100V 50W DO5 |
