English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/435 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 14 V |
| 宽容: | ±1% |
| 功率 - 最大值: | - |
| 阻抗（最大）（zzt）: | 200 Ohms |
| 电流 - 反向泄漏@ vr: | 50 nA @ 10.7 V |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
| 工作温度: | -65°C ~ 175°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-213AA (Glass) |
| 供应商设备包: | DO-213AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ACZRM5225B-HFComchip Technology |
DIODE ZENER 3V 500MW SOD123FL |
|
1N4752G A0GTSC (Taiwan Semiconductor) |
DIODE ZENER 33V 1W DO204AL |
|
1SMA5943HM2GTSC (Taiwan Semiconductor) |
DIODE ZENER 56V 1.5W DO214AC |
|
BZV55C20Roving Networks / Microchip Technology |
DIODE ZENER 20V DO213AA |
|
BZX384C15-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 200MW SOD323 |
|
BZT52C56Diotec Semiconductor |
DIODE ZENER 56V 500MW SOD123F |
|
BZT52B4V7-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 410MW SOD123 |
|
JAN1N970C-1Roving Networks / Microchip Technology |
DIODE ZENER 24V 500MW DO35 |
|
MMSZ4688-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 500MW SOD123 |
|
1N6021BRoving Networks / Microchip Technology |
DIODE ZENER 75V 500MW DO35 |
|
BZX84J-B13,115Nexperia |
DIODE ZENER 13V 550MW SOD323F |
|
MM3Z6V2ST1Rochester Electronics |
DIODE ZENER 6.2V 200MW SOD323 |
|
BZX79-C75,113Nexperia |
DIODE ZENER 75V 400MW ALF2 |
