DIODE ZENER 6.8V 500MW DO35
NANO-D 31POS FEMALE W/ 18IN WIRE
CAP CER 680PF 1KV NP0 1210
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 6.8 V |
宽容: | ±2% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 15 Ohms |
电流 - 反向泄漏@ vr: | 4 mA @ 2 V |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 100 mA |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SMBJ4761AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 75V 2W SMBJ |
|
JAN1N967C-1Roving Networks / Microchip Technology |
DIODE ZENER 18V 500MW DO35 |
|
PZU4.3BL,315Nexperia |
DIODE ZENER 4.3V 250MW DFN1006-2 |
|
1PGSMB5939 R5GTSC (Taiwan Semiconductor) |
DIODE ZENER 39V 3W DO214AA |
|
BZD27C13P RQGTSC (Taiwan Semiconductor) |
DIODE ZENER 13.25V 1W SUB SMA |
|
MMSZ4696-TPMicro Commercial Components (MCC) |
DIODE ZENER 9.1V 500MW SOD123 |
|
BZD27B10P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 800MW DO219AB |
|
1SMA5942HR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 51V 1.5W DO214AC |
|
TLZ6V2-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 500MW SOD80 |
|
JANTX1N829-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO35 |
|
Z2SMB68Diotec Semiconductor |
DIODE ZENER 68V 2W SMB |
|
SMAZ33-TPMicro Commercial Components (MCC) |
DIODE ZENER 33V 1W DO214AC |
|
JAN1N3033D-1Roving Networks / Microchip Technology |
DIODE ZENER 36V 1W DO41 |