类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/115 |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 62 V |
宽容: | ±2% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 125 Ohms |
电流 - 反向泄漏@ vr: | 10 µA @ 47.1 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -55°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JAN1N4126D-1Roving Networks / Microchip Technology |
DIODE ZENER 51V DO35 |
|
1N5930CPE3/TR8Roving Networks / Microchip Technology |
DIODE ZENER 16V 1.5W DO204AL |
|
BZX84C6V2CC-HFComchip Technology |
DIODE ZENER 6.2V 350MW SOT23 |
|
BZG03C130-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 130V 1.25W DO214AC |
|
JAN1N5542C-1Roving Networks / Microchip Technology |
DIODE ZENER 24V 500MW DO35 |
|
1N965B TR PBFREECentral Semiconductor |
DIODE ZENER 15V 500MW DO35 |
|
BZX384C5V1-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 200MW SOD323 |
|
1N5264C-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 60V 500MW DO35 |
|
1N5729DRoving Networks / Microchip Technology |
DIODE ZENER 5.1V 500MW DO35 |
|
TLZ11C-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 500MW SOD80 |
|
DZ2710000LPanasonic |
DIODE ZENER 10V 120MW SSSMINI2 |
|
MMBZ4683-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3V 350MW SOT23-3 |
|
BZX55C11Rochester Electronics |
DIODE ZENER 11V 500MW DO35 |