English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 56 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 250 mW |
| 阻抗（最大）（zzt）: | 200 Ohms |
| 电流 - 反向泄漏@ vr: | 50 nA @ 39.2 V |
| 电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
| 工作温度: | -65°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | SOD-882 |
| 供应商设备包: | DFN1006-2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMBJ5369AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 51V 5W SMBJ |
|
BZX384C18-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 200MW SOD323 |
|
1N5929AP/TR8Roving Networks / Microchip Technology |
DIODE ZENER 15V 1.5W DO204AL |
|
CDLL5946DRoving Networks / Microchip Technology |
DIODE ZENER 75V 1.25W DO213AB |
|
BZT52B2V4-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 2.4V 410MW SOD123 |
|
MMBZ5248B-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 225MW SOT23-3 |
|
JANTX1N977DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 47V 500MW DO213AA |
|
BZT55C56-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 500MW SOD80 |
|
MMBZ5227C-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.6V 225MW SOT23-3 |
|
JANTXV1N4979USRoving Networks / Microchip Technology |
DIODE ZENER 75V 5W D5B |
|
JAN1N5521C-1Roving Networks / Microchip Technology |
DIODE ZENER 4.3V 500MW DO35 |
|
MM1Z4745ADiotec Semiconductor |
DIODE ZENER 16V 1W SOD123F |
|
BZX584B6V2 RSGTSC (Taiwan Semiconductor) |
DIODE ZENER 6.2V 150MW SOD523F |
