类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 7.5 V |
宽容: | ±2% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 15 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 5 V |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 200 mA |
工作温度: | -55°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | ALF2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N5938APE3/TR12Roving Networks / Microchip Technology |
DIODE ZENER 36V 1.5W DO204AL |
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BZX85C7V5 R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 7.5V 1.3W DO204AL |
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BZT55B10-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 500MW SOD80 |
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1PMT4627E3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 1W DO216 |
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BZT52C43-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 410MW SOD123 |
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BZX85C5V1-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 1.3W DO41 |
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1N5923AP/TR8Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 1.5W DO204AL |
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BZG05C4V7-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 1.25W DO214AC |
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BZT52-B7V5JNexperia |
DIODE ZENER 7.5V 590MW SOD123 |
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BZT52B75-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 75V 410MW SOD123 |
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BZD27B160P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 160V 800MW DO219AB |
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1N4738CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 1W DO204AL |
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SMBJ4764/TR13Roving Networks / Microchip Technology |
DIODE ZENER 100V 2W SMBJ |