类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, BZD27B |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 130 V |
宽容: | - |
功率 - 最大值: | 800 mW |
阻抗(最大)(zzt): | 300 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 100 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Surface Mount |
包/箱: | DO-219AB |
供应商设备包: | DO-219AB (SMF) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ZPD3B9Diotec Semiconductor |
DIODE ZENER 3.9V 500MW DO35 |
|
SMBJ5945C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 68V 2W SMBJ |
|
1N4741A TR PBFREECentral Semiconductor |
DIODE ZENER 11V 1W DO41 |
|
1N5953BRoving Networks / Microchip Technology |
DIODE ZENER |
|
PLZ27A-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 500MW DO219AC |
|
JANTXV1N3016BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 1W DO213AB |
|
BZX84W-B3V9XNexperia |
DIODE ZENER 3.9V 275MW SOT323 |
|
JANTX1N3821DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 3.3V 1W DO213AB |
|
TZQ5226B-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.3V 500MW SOD80 |
|
CDLL5529BRoving Networks / Microchip Technology |
DIODE ZENER 9.1V 500MW DO213AB |
|
BZX384B51-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 200MW SOD323 |
|
BZT585B43TQ-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 43V 350MW SOD523 |
|
JAN1N969C-1Roving Networks / Microchip Technology |
DIODE ZENER 22V 500MW DO35 |