类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/115 |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 24 V |
宽容: | ±2% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 25 Ohms |
电流 - 反向泄漏@ vr: | 10 µA @ 18.2 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -55°C ~ 175°C |
安装类型: | Surface Mount |
包/箱: | DO-213AB, MELF (Glass) |
供应商设备包: | DO-213AB (MELF, LL41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MMBZ4700-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 350MW SOT23-3 |
|
CDLL3019ARoving Networks / Microchip Technology |
DIODE ZENER 9.1V 1W DO213AB |
|
SZBZX84C3V3LT3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 3.3V 225MW SOT23-3 |
|
TZX8V2A-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 500MW DO35 |
|
1SMA4755HM2GTSC (Taiwan Semiconductor) |
DIODE ZENER 43V 1.25W DO214AC |
|
CDZT2RA16BROHM Semiconductor |
DIODE ZENER 16V 100MW VMN2 |
|
JANTX1N5523CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 500MW DO213AA |
|
TZMC56-M-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 500MW SOD80 |
|
BZX384B24-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 200MW SOD323 |
|
BZD17C56P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 56V 800MW DO219AB |
|
1N5227B TR PBFREECentral Semiconductor |
DIODE ZENER 3.6V 500MW DO35 |
|
JANTX1N4620-1Roving Networks / Microchip Technology |
DIODE ZENER 3.3V 500MW DO35 |
|
BZT52C12TQ-7-FZetex Semiconductors (Diodes Inc.) |
DIODE ZENER 12V 300MW SOD523 |