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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 43 V |
| 宽容: | - |
| 功率 - 最大值: | 800 mW |
| 阻抗（最大）（zzt）: | - |
| 电流 - 反向泄漏@ vr: | 1 µA @ 33 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -55°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-219AB |
| 供应商设备包: | DO-219AB (SMF) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZD27B36P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 800MW DO219AB |
|
SZMM5Z30VT5GFNexperia |
SZMM5Z30VT5G/SOD523/SC-79 |
|
CMPZ5241B TR PBFREECentral Semiconductor |
DIODE ZENER 11V 350MW SOT23 |
|
1N5924BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 9.1V 1.25W DO213AB |
|
BZG04-13-HM3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 1.25W DO214AC |
|
BZX84B16-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 300MW SOT23-3 |
|
GDZ8V2B-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 200MW SOD323 |
|
1N5250B TR PBFREECentral Semiconductor |
DIODE ZENER 20V 500MW DO35 |
|
BZT52C18K RKGTSC (Taiwan Semiconductor) |
DIODE ZENER 18V 200MW SOD523F |
|
JAN1N829-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO35 |
|
CZRUR52C9V1-HFComchip Technology |
DIODE ZENER 9.1V 150MW 0603 |
|
JANTX1N4464DRoving Networks / Microchip Technology |
DIODE ZENER 9.1V 1.5W DO41 |
|
BZD17C100P RQGTSC (Taiwan Semiconductor) |
DIODE ZENER 100V 800MW SUB SMA |
