类型 | 描述 |
---|---|
系列: | BZG05B-M |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 6.2 V |
宽容: | ±1.94% |
功率 - 最大值: | 1.25 W |
阻抗(最大)(zzt): | 4 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 3 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-214AC, SMA |
供应商设备包: | DO-214AC (SMA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SMPZ3931B-M3/84AVishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 500MW DO220AA |
|
BZV90-C33,115Nexperia |
DIODE ZENER 33V 1.5W SOT223 |
|
NTE5253ANTE Electronics, Inc. |
DIODE ZENER 11V 50W DO5 |
|
BZX384C36-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 36V 200MW SOD323 |
|
1N4772Roving Networks / Microchip Technology |
DIODE ZENER 9.1V 500MW DO35 |
|
BZD27B150P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 150V 800MW DO219AB |
|
JANTX1N4627UR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO213AA |
|
1N5224B-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 2.8V 500MW DO35 |
|
BZX84C5V6LT3Rochester Electronics |
DIODE ZENER 5.6V 225MW SOT23-3 |
|
BZV55B68 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 68V 500MW MINI MELF |
|
BZX84C5V1-AQDiotec Semiconductor |
DIODE ZENER 5.1V 300MW SOT23-3 |
|
JAN1N4481CUSRoving Networks / Microchip Technology |
DIODE ZENER 47V 1.5W D5A |
|
SMAZ5921B-E3/5AVishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 500MW DO214AC |