类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 20 V |
宽容: | ±2% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 55 Ohms |
电流 - 反向泄漏@ vr: | 100 nA @ 15 V |
电压 - 正向 (vf) (max) @ if: | 1 V @ 100 mA |
工作温度: | -65°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-213AC, MINI-MELF, SOD-80 |
供应商设备包: | Mini MELF |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N5928CPE3/TR12Roving Networks / Microchip Technology |
DIODE ZENER 13V 1.5W DO204AL |
|
CDLL3032Roving Networks / Microchip Technology |
DIODE ZENER 33V 1W DO213AB |
|
BZD17C6V2P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 800MW DO219AB |
|
MM3Z11VST1Rochester Electronics |
DIODE ZENER SOD323 |
|
BZX585-C6V2,135Nexperia |
DIODE ZENER 6.2V 300MW SOD523 |
|
BZX585-B10,115Nexperia |
DIODE ZENER 10V 300MW SOD523 |
|
JANTX1N4624DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 4.7V 500MW DO213AA |
|
BZX55C5V6-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 500MW DO35 |
|
JAN1N4957DRoving Networks / Microchip Technology |
DIODE ZENER 9.1V 5W E AXIAL |
|
BZT55C3V3-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.3V 500MW SOD80 |
|
CZRT55C39-GComchip Technology |
DIODE ZENER 39V 350MW SOT23-3 |
|
UDZVFHTE-1722BROHM Semiconductor |
DIODE ZENER 22V 200MW UMD2 |
|
BZT52B9V1-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 410MW SOD123 |