类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 12 V |
宽容: | ±10% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 32 Ohms |
电流 - 反向泄漏@ vr: | 100 nA @ 8 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CMSZ5248B TR TIN/LEADCentral Semiconductor |
DIODE ZENER 18V 275MW SOT323 |
|
JAN1N5545CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 30V 500MW DO213AA |
|
JANTX1N4372DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 3V 500MW DO213AA |
|
MMBZ5242B-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 225MW SOT23-3 |
|
1PGSMA150Z M2GTSC (Taiwan Semiconductor) |
DIODE ZENER 150V 1.25W DO214AC |
|
BZT52B33-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 410MW SOD123 |
|
JANTX1N4101CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 500MW DO213AA |
|
MTZJ22SA R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 20.68V 500MW DO34 |
|
BZD27C82P RQGTSC (Taiwan Semiconductor) |
DIODE ZENER 82V 1W SUB SMA |
|
JANTX1N825UR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO213AA |
|
KDZVTFTR9.1BROHM Semiconductor |
DIODE ZENER 9.1V 1W PMDU |
|
MMBZ5231BLT3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 5.1V 225MW SOT23-3 |
|
NTE5176AKNTE Electronics, Inc. |
DIODE ZENER 4.7V 10W DO4 |