类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 9.1 V |
宽容: | ±5% |
功率 - 最大值: | 300 mW |
阻抗(最大)(zzt): | 15 Ohms |
电流 - 反向泄漏@ vr: | 500 nA @ 6 V |
电压 - 正向 (vf) (max) @ if: | 1 V @ 10 mA |
工作温度: | -50°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | SC-90, SOD-323F |
供应商设备包: | SOD-323 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N4621URRoving Networks / Microchip Technology |
DIODE ZENER 3.6V 500MW DO213AA |
|
BZX84B6V8-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 300MW SOT23-3 |
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1N4781Roving Networks / Microchip Technology |
DIODE ZENER 8.5V 500MW DO35 |
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1N5244B-TVishay General Semiconductor – Diodes Division |
DIODE ZENER 14V 500MW DO35 |
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JAN1N4125UR-1Roving Networks / Microchip Technology |
DIODE ZENER 47V DO213AA |
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PZU7.5B3,115Nexperia |
DIODE ZENER 7.5V 310MW SOD323F |
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MMBZ5237B-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 8.2V 225MW SOT23-3 |
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SMZG3791B-M3/5BVishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 1.5W DO215AA |
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JANTX1N4101DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 500MW DO213AA |
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MMSZ4681-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 2.4V 500MW SOD123 |
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JAN1N4624C-1Roving Networks / Microchip Technology |
DIODE ZENER 4.7V 500MW DO35 |
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MMSZ4714-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 500MW SOD123 |
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1N5337BGSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 4.7V 5W AXIAL |