类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 12 V |
宽容: | ±5% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 200 Ohms |
电流 - 反向泄漏@ vr: | 50 nA @ 9.2 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
1N5242BTRSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 12V 500MW DO35 |
|
1N3519ARoving Networks / Microchip Technology |
DIODE ZENER 11V 500MW DO35 |
|
NTE5251ANTE Electronics, Inc. |
DIODE ZENER 9.1V 50W DO5 |
|
BZD17C180P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 180V 800MW DO219AB |
|
1SMA5946HR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 75V 1.5W DO214AC |
|
UDZS24B RRGTSC (Taiwan Semiconductor) |
DIODE ZENER 24V 200MW SOD323F |
|
TZMC24-M-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 500MW SOD80 |
|
GDZ30B-HG3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 200MW SOD323 |
|
PLZ39B-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 500MW DO219AC |
|
BZD27B51P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 800MW DO219AB |
|
PZU9.1B,115Nexperia |
DIODE ZENER 9.1V 310MW SOD323F |
|
JANTXV1N4114D-1Roving Networks / Microchip Technology |
DIODE ZENER 20V 500MW DO35 |
|
PLZ4V7B-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 4.68V 960MW DO219AC |