English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 5.1 V |
| 宽容: | ±20% |
| 功率 - 最大值: | 1.5 W |
| 阻抗（最大）（zzt）: | 4 Ohms |
| 电流 - 反向泄漏@ vr: | 5 µA @ 2 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -65°C ~ 150°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AL, DO-41, Axial |
| 供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JANTX1N4626-1Roving Networks / Microchip Technology |
DIODE ZENER 5.6V 500MW DO35 |
|
BZT52-B5V1JNexperia |
DIODE ZENER 5.1V 590MW SOD123 |
|
1N4972Roving Networks / Microchip Technology |
DIODE ZENER 39V 5W AXIAL |
|
BZX84C24LT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 24V 225MW SOT23-3 |
|
BZD27C51P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 800MW DO219AB |
|
MMSZ4705-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 500MW SOD123 |
|
1N5257B-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 500MW DO35 |
|
1N4747A-T50ASanyo Semiconductor/ON Semiconductor |
DIODE ZENER 20V 1W DO41 |
|
SMBJ5367C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 43V 5W SMBJ |
|
JAN1N4106DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 12V DO213AA |
|
BZG04-56-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 68V 1.25W DO214AC |
|
MAZ251000GPanasonic |
DIODE ZENER 51V 1W DO41 |
|
CDLL5251ARoving Networks / Microchip Technology |
DIODE ZENER 22V 10MW DO213AB |
