类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 13 V |
宽容: | ±5% |
功率 - 最大值: | 1.3 W |
阻抗(最大)(zzt): | 10 Ohms |
电流 - 反向泄漏@ vr: | 200 nA @ 9.1 V |
电压 - 正向 (vf) (max) @ if: | 1 V @ 50 mA |
工作温度: | -65°C ~ 200°C |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SML4756AHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE ZENER 47V 1W DO214AC |
|
CZ5342B TR PBFREECentral Semiconductor |
DIODE ZENER 6.8V 5W DO201 |
|
GDZ20B-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 200MW SOD323 |
|
PZU7.5BL,315Nexperia |
DIODE ZENER 7.5V 250MW DFN1006-2 |
|
DZ2W07500LPanasonic |
DIODE ZENER 7.5V 1W MINI2 |
|
BZD27B27P-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 800MW DO219AB |
|
BZX79-C11,143Nexperia |
DIODE ZENER 11V 400MW ALF2 |
|
MM3Z30VBSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 30V 200MW SOD323F |
|
1N4918Roving Networks / Microchip Technology |
DIODE ZENER 19.2V 500MW DO35 |
|
BZG05C75-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 75V 1.25W DO214AC |
|
JAN1N4619D-1Roving Networks / Microchip Technology |
DIODE ZENER 3V 500MW DO35 |
|
MMBZ5242B-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 225MW SOT23-3 |
|
1N4747A B0GTSC (Taiwan Semiconductor) |
DIODE ZENER 20V 1W DO204AL |