English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 25 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 35 Ohms |
| 电流 - 反向泄漏@ vr: | 100 nA @ 19 V |
| 电压 - 正向 (vf) (max) @ if: | 1.5 V @ 200 mA |
| 工作温度: | -65°C ~ 175°C |
| 安装类型: | Surface Mount |
| 包/箱: | SOD-80 Variant |
| 供应商设备包: | SOD-80 QuadroMELF |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZD27C43PHR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 43V 1W SUB SMA |
|
1SMA5931 M2GTSC (Taiwan Semiconductor) |
DIODE ZENER 18V 1.5W DO214AC |
|
SZBZX84C20LT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 20V 225MW SOT23-3 |
|
BZX384B24-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 200MW SOD323 |
|
JANTX1N4576AUR-1Roving Networks / Microchip Technology |
DIODE ZENER 3V 500MW DO213AA |
|
MMBZ4691-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 350MW SOT23-3 |
|
MMSZ5228B-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 500MW SOD123 |
|
SMBJ4737A/TR13Roving Networks / Microchip Technology |
DIODE ZENER 7.5V 2W SMBJ |
|
JAN1N966C-1Roving Networks / Microchip Technology |
DIODE ZENER 16V 500MW DO35 |
|
HZS2B1TD-ERochester Electronics |
DIODE ZENER 0.4W |
|
1N4757A B0GTSC (Taiwan Semiconductor) |
DIODE ZENER 51V 1W DO204AL |
|
GLL4741-E3/96Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 1W MELF |
|
PZU16BA,115Nexperia |
DIODE ZENER 16V 320MW SOD323 |
