类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101 |
包裹: | Cut Tape (CT)Tape & Box (TB) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 4.7 V |
宽容: | ±5% |
功率 - 最大值: | 1.3 W |
阻抗(最大)(zzt): | 8 Ohms |
电流 - 反向泄漏@ vr: | 10 µA @ 1 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | 175°C (TJ) |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-41 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JANTX1N5537DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 17V 500MW DO213AA |
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SMBJ5939B/TR13Roving Networks / Microchip Technology |
DIODE ZENER 39V 2W SMBJ |
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1N5933AP/TR12Roving Networks / Microchip Technology |
DIODE ZENER 22V 1.5W DO204AL |
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MMSZ5260B-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 500MW SOD123 |
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BZX84C13-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 300MW SOT23-3 |
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SMBJ4758/TR13Roving Networks / Microchip Technology |
DIODE ZENER 56V 2W SMBJ |
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MMSZ5246B-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 500MW SOD123 |
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JAN1N3017DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 7.5V 1W DO213AB |
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BZT55B8V2 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 8.2V 500MW MINI MELF |
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1PMT5947AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 82V 3W DO216AA |
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SZMM3Z5V6T1GXNexperia |
SZMM3Z5V6T1G/SOD323/SOD2 |
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SMZG3797B-E3/5BVishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 1.5W DO215AA |
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1N5940AP/TR8Roving Networks / Microchip Technology |
DIODE ZENER 43V 1.5W DO204AL |