English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 10 V |
| 宽容: | ±2% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 5.2 Ohms |
| 电流 - 反向泄漏@ vr: | 500 nA @ 7 V |
| 电压 - 正向 (vf) (max) @ if: | - |
| 工作温度: | -50°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-213AA |
| 供应商设备包: | DO-213AA, MINI-MELF |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TLZ39B-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 500MW SOD80 |
|
BZD17C5V1P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 800MW DO219AB |
|
SMBJ5926A/TR13Roving Networks / Microchip Technology |
DIODE ZENER 11V 2W SMBJ |
|
1N5235B-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 500MW DO35 |
|
SZMMSZ2V7ET1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 2.7V 500MW SOD123 |
|
1N5730BRoving Networks / Microchip Technology |
DIODE ZENER 5.6V 500MW DO35 |
|
1PMT4627C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 1W DO216 |
|
PTV11B-M3/85AVishay General Semiconductor – Diodes Division |
DIODE ZENER 11.7V 600MW DO220AA |
|
1N5937AP/TR8Roving Networks / Microchip Technology |
DIODE ZENER 33V 1.5W DO204AL |
|
1SMB5955 M4GTSC (Taiwan Semiconductor) |
DIODE ZENER 180V 3W DO214AA |
|
SMBJ5932C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 20V 2W SMBJ |
|
1N5920AP/TR8Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 1.5W DO204AL |
|
MMBZ5239B-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 225MW SOT23-3 |
