类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 7.5 V |
宽容: | ±6% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 15 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 5 V |
电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
工作温度: | -65°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | SOD-123 |
供应商设备包: | SOD-123 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZD27C180P-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 180V 800MW DO219AB |
|
GLL4737A-E3/96Vishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 1W MELF |
|
JANTX1N4620D-1Roving Networks / Microchip Technology |
DIODE ZENER 3.3V 500MW DO35 |
|
BZX384C62-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 62V 200MW SOD323 |
|
JANTX1N4468DRoving Networks / Microchip Technology |
DIODE ZENER 13V 1.5W DO41 |
|
MMBZ5234ELT1Rochester Electronics |
DIODE ZENER 6.2V 225MW SOT23-3 |
|
MTZJ10SC R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 9.95V 500MW DO34 |
|
BZX84-C4V3,235Rochester Electronics |
DIODE ZENER 4.3V 250MW TO236AB |
|
BZD27C150P-M-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 150V 800MW DO219AB |
|
BZX55B4V3 A0GTSC (Taiwan Semiconductor) |
DIODE ZENER 4.3V 500MW DO35 |
|
MMBZ5241BLT1Rochester Electronics |
DIODE ZENER 11V 225MW SOT23-3 |
|
JANTXV1N6333USRoving Networks / Microchip Technology |
DIODE ZENER 24V 500MW MELF |
|
1PMT5955BE3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 180V 3W DO216AA |