类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 5.1 V |
宽容: | ±5% |
功率 - 最大值: | 5 W |
阻抗(最大)(zzt): | 1.5 Ohms |
电流 - 反向泄漏@ vr: | 10 µA @ 1 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 1 A |
工作温度: | -65°C ~ 200°C |
安装类型: | Through Hole |
包/箱: | DO-201AA, DO-27, Axial |
供应商设备包: | DO-201 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JAN1N974CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 36V 500MW DO213AA |
|
1N5224C-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 2.8V 500MW DO35 |
|
TZM5246B-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 500MW SOD80 |
|
BZX384B16-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 200MW SOD323 |
|
PTZTE2522AROHM Semiconductor |
DIODE ZENER 22V 1W PMDS |
|
BZG05B3V9-HM3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 1.25W DO214AC |
|
BZM55C16-TR3Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 500MW MICROMELF |
|
BZD27B75P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 75V 800MW DO219AB |
|
MMSZ5247B-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 17V 500MW SOD123 |
|
1N5925BPE3/TR12Roving Networks / Microchip Technology |
DIODE ZENER 10V 1.5W DO204AL |
|
RKZ3.0B2KG#P1Rochester Electronics |
DIODE ZENER |
|
MMBZ5257B-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 225MW SOT23-3 |
|
MTZJ3V6SA R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 3.58V 500MW DO34 |