类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 51 V |
宽容: | ±10% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 95 Ohms |
电流 - 反向泄漏@ vr: | 5 µA @ 38.8 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -65°C ~ 150°C |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MMBZ4626-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 350MW SOT23-3 |
|
JAN1N4119CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 28V DO213AA |
|
JAN1N965BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 15V 500MW DO213AA |
|
BZD27C20P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 800MW DO219AB |
|
HZS4CLLTD-ERochester Electronics |
DIODE ZENER |
|
BZD27C100PHRUGTSC (Taiwan Semiconductor) |
DIODE ZENER 100V 1W SUB SMA |
|
SMBJ5938C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 36V 2W SMBJ |
|
JAN1N5520D-1Roving Networks / Microchip Technology |
DIODE ZENER 3.9V 500MW DO35 |
|
SMZJ3794B-E3/5BVishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 1.5W DO214AA |
|
SMBJ4749AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 24V 2W SMBJ |
|
BZD27B3V6P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.6V 800MW DO219AB |
|
MMSZ5230C-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 500MW SOD123 |
|
CZRUR30VB-HFComchip Technology |
DIODE ZENER 30V 150MW 0603 |