类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 47 V |
宽容: | ±5% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 70 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 35 V |
电压 - 正向 (vf) (max) @ if: | 1 V @ 200 mA |
工作温度: | -50°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-214AC, SMA |
供应商设备包: | DO-214AC (SMA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SZMMSZ4690ET1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 5.6V 500MW SOD123 |
|
HZS11B1LTA-ERochester Electronics |
DIODE ZENER 10.4V 0.4W |
|
JAN1N6335USRoving Networks / Microchip Technology |
DIODE ZENER 30V 500MW MELF |
|
BZM55B30-TR3Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 500MW MICROMELF |
|
CMZ5936B TR13 PBFREECentral Semiconductor |
DIODE ZENER 30V 500MW SMA |
|
GLL4748-E3/97Vishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 1W MELF |
|
CDLL4702Roving Networks / Microchip Technology |
DIODE ZENER 15V 500MW DO213AB |
|
MMBZ5228B-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 225MW SOT23-3 |
|
JAN1N4127DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 56V DO213AA |
|
BZX84B15-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 300MW SOT23-3 |
|
SML4742AHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 1W DO214AC |
|
CMOZ6V8 TR PBFREECentral Semiconductor |
DIODE ZENER 6.8V 300MW SOD523 |
|
MMBZ5241B-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 225MW SOT23-3 |