类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 30 V |
宽容: | ±3% |
功率 - 最大值: | 125 mW |
阻抗(最大)(zzt): | 78 Ohms |
电流 - 反向泄漏@ vr: | 100 nA @ 23 V |
电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
工作温度: | -55°C ~ 125°C |
安装类型: | Surface Mount |
包/箱: | 0402 (1006 Metric) |
供应商设备包: | 0402/SOD-923F |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BZX85C30 R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 30V 1.3W DO204AL |
|
1N4917Roving Networks / Microchip Technology |
DIODE ZENER 19.2V 500MW DO35 |
|
BZD27B180P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 180V 800MW DO219AB |
|
JAN1N3017D-1Roving Networks / Microchip Technology |
DIODE ZENER 7.5V 1W DO41 |
|
MMBZ4700-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 350MW SOT23-3 |
|
PTV8.2B-M3/85AVishay General Semiconductor – Diodes Division |
DIODE ZENER 8.8V 600MW DO220AA |
|
1N5233B-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 6V 500MW DO35 |
|
PLZ24C-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 500MW DO219AC |
|
BZT52C7V5-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 410MW SOD123 |
|
PDZ36BGWJNexperia |
DIODE ZENER 36V 365MW SOD123 |
|
CZRT5222B-GComchip Technology |
DIODE ZENER 2.5V 300MW SOT23-3 |
|
BZX85B3V6-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 3.6V 1.3W DO41 |
|
BZT55C24-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 500MW SOD80 |