English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/117 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 75 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 270 Ohms |
| 电流 - 反向泄漏@ vr: | 500 nA @ 56 V |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
| 工作温度: | -55°C ~ 175°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-213AA (Glass) |
| 供应商设备包: | DO-213AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
GLL4746A-E3/96Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 1W MELF |
|
JANTX1N3045CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 110V 1W DO213AB |
|
CDLL5229BRoving Networks / Microchip Technology |
DIODE ZENER 4.3V 10MW DO213AB |
|
GDZ22B-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 200MW SOD323 |
|
1N4372ARochester Electronics |
DIODE ZENER 3V 500MW DO35 |
|
JAN1N4126C-1Roving Networks / Microchip Technology |
DIODE ZENER 51V DO35 |
|
CDLL5947CRoving Networks / Microchip Technology |
DIODE ZENER 82V 1.25W DO213AB |
|
BZX79B10 A0GTSC (Taiwan Semiconductor) |
DIODE ZENER 10V 500MW DO35 |
|
MMBZ4702-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 350MW SOT23-3 |
|
JANTXV1N3030B-1Roving Networks / Microchip Technology |
DIODE ZENER 27V 1W DO41 |
|
3EZ180Diotec Semiconductor |
DIODE ZENER 180V 3W DO15 |
|
BZD27B110P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 110V 800MW DO219AB |
|
1N4745A-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 1.3W DO41 |
