English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 47 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 2 W |
| 阻抗（最大）（zzt）: | 67 Ohms |
| 电流 - 反向泄漏@ vr: | 1 µA @ 35.8 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -65°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | SMBJ (DO-214AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JANTX1N3824AUR-1Roving Networks / Microchip Technology |
DIODE ZENER 4.3V 1W DO213AB |
|
JAN1N6327USRoving Networks / Microchip Technology |
DIODE ZENER 13V 500MW MELF |
|
SMZ43Diotec Semiconductor |
DIODE ZENER 43V 2W MELF |
|
1N5933CP/TR8Roving Networks / Microchip Technology |
DIODE ZENER 22V 1.5W DO204AL |
|
CDLL5931CRoving Networks / Microchip Technology |
DIODE ZENER 18V 1.25W DO213AB |
|
1N3026B-1Roving Networks / Microchip Technology |
DIODE ZENER 18V 1W DO204AL |
|
BZT55C6V8 L0GTSC (Taiwan Semiconductor) |
DIODE ZENER 6.8V 500MW MINI MELF |
|
BZG03C91-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 91V 1.25W DO214AC |
|
BZD27B33P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 800MW DO219AB |
|
ACZRA4749-HFComchip Technology |
DIODE ZENER 24V 1W DO214AC |
|
JAN1N963DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 12V 500MW DO213AA |
|
SMBJ4757E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 51V 2W SMBJ |
|
MMSZ5256C-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 500MW SOD123 |
