English
简体中文
CAP CER 390PF 63V C0G/NP0 0805
DIODE ZENER 9.1V 500MW DO35
FIXED IND 120NH 210MA 900 MOHM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Box (TB) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 9.1 V |
| 宽容: | - |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 20 Ohms |
| 电流 - 反向泄漏@ vr: | 1 µA @ 6.8 V |
| 电压 - 正向 (vf) (max) @ if: | 1.5 V @ 200 mA |
| 工作温度: | -65°C ~ 175°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AH, DO-35, Axial |
| 供应商设备包: | DO-35 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N4745AHA0GTSC (Taiwan Semiconductor) |
DIODE ZENER 16V 1W DO204AL |
|
NTE5119ANTE Electronics, Inc. |
DIODE ZENER 6.2V 5W DO35 |
|
1N4746AP/TR12Roving Networks / Microchip Technology |
DIODE ZENER 18V 1W DO204AL |
|
CZRZ6V8B-HFComchip Technology |
DIODE ZENER 6.8V 100MW 0201 |
|
TLZ20A-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 500MW SOD80 |
|
BZD27C24P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 800MW DO219AB |
|
TZX16B-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 500MW DO35 |
|
BZX79-C62,113Nexperia |
DIODE ZENER 62V 400MW ALF2 |
|
BZD27C18PHR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 17.95V 1W SUB SMA |
|
JANTX1N4116D-1Roving Networks / Microchip Technology |
DIODE ZENER 24V 500MW DO35 |
|
GDZ7V5B-HG3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 200MW SOD323 |
|
JANTXV1N4571AUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.4V 500MW DO213AA |
|
1N5340BGSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 6V 5W AXIAL |