类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 3.6 V |
宽容: | ±10% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 24 Ohms |
电流 - 反向泄漏@ vr: | 3 µA @ 900 mV |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Surface Mount |
包/箱: | DO-213AB, MELF |
供应商设备包: | DO-213AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CDZFHT2RA3.6BROHM Semiconductor |
DIODE ZENER 3.72V 100MW VMN2 |
|
BZX384B39-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 200MW SOD323 |
|
1N5757CRoving Networks / Microchip Technology |
DIODE ZENER 75V 500MW DO35 |
|
TZM5233B-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6V 500MW SOD80 |
|
JAN1N4464CRoving Networks / Microchip Technology |
DIODE ZENER 9.1V 1.5W DO41 |
|
SZ1SMB5929BT3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 15V 3W SMB |
|
1PMT4115CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 22V 1W DO216 |
|
CDLL4762ARoving Networks / Microchip Technology |
DIODE ZENER 82V DO213AB |
|
TLZ5V1-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 500MW SOD80 |
|
BZT55B27 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 27V 500MW MINI MELF |
|
NTE5009ANTE Electronics, Inc. |
DIODE ZENER 4.7V 500 MV DO35 |
|
BZX84-B4V7,215Nexperia |
DIODE ZENER 4.7V 250MW TO236AB |
|
BZD27C20P MQGTSC (Taiwan Semiconductor) |
DIODE ZENER 20V 1W SUB SMA |