English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 12.8 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 400 mW |
| 阻抗（最大）（zzt）: | 50 Ohms |
| 电流 - 反向泄漏@ vr: | - |
| 电压 - 正向 (vf) (max) @ if: | - |
| 工作温度: | -25°C ~ 100°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AA, DO-7, Axial |
| 供应商设备包: | DO-7 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZG04-150-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 180V 1.25W DO214AC |
|
SZMMSZ4714T1GRochester Electronics |
33 V LOW CURRENT ZENERDIODEVOLTA |
|
DDZ5V6ASF-7Zetex Semiconductors (Diodes Inc.) |
DIODE ZENER 5.42V 500MW SOD323F |
|
BZX79C7V5-T50ARochester Electronics |
BZX79C7V5 - ZENER 7.5V 05W 5% |
|
GDZ13B-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 13V 200MW SOD323 |
|
1N5267B-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 75V 500MW DO35 |
|
HZS2BLLTD-ERochester Electronics |
DIODE ZENER |
|
JANTX1N3026DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 18V 1W DO213AB |
|
NTE5177ANTE Electronics, Inc. |
DIODE ZENER 5.1V 10W DO4 |
|
1PMT4120/TR7Roving Networks / Microchip Technology |
DIODE ZENER 30V 1W DO216 |
|
TLZ6V8A-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 500MW SOD80 |
|
BZX384B9V1-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 200MW SOD323 |
|
JAN1N4978CRoving Networks / Microchip Technology |
DIODE ZENER 68V 5W E AXIAL |
