类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/437 |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 28 V |
宽容: | ±5% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 100 Ohms |
电流 - 反向泄漏@ vr: | 10 nA @ 25.2 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | DO-35 (DO-204AH) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JAN1N755CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 7.5V 500MW DO213AA |
|
MMBZ5222BLT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 2.5V 225MW SOT23-3 |
|
HZM22NB1TL-ERochester Electronics |
DIODE ZENER |
|
1N5998ARoving Networks / Microchip Technology |
DIODE ZENER 8.2V 500MW DO35 |
|
BZX85B7V5-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 1.3W DO41 |
|
PLZ6V8C-G3/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 6.84V 960MW DO219AC |
|
BZD27C9V1P-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 800MW DO219AB |
|
NZ9F11VST5GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 11V 200MW SOD923 |
|
BZT52B3V3-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.3V 410MW SOD123 |
|
1N4912Roving Networks / Microchip Technology |
DIODE ZENER 12.8V 400MW DO7 |
|
CMHZ5228B TR PBFREECentral Semiconductor |
DIODE ZENER 3.9V 500MW SOD123 |
|
BZD17C11P R3GTSC (Taiwan Semiconductor) |
DIODE ZENER 11V 800MW SUB SMA |
|
BZX585-B7V5,115Nexperia |
DIODE ZENER 7.5V 300MW SOD523 |