English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 3.9 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 2 W |
| 阻抗（最大）（zzt）: | 7.5 Ohms |
| 电流 - 反向泄漏@ vr: | 25 µA @ 1 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -65°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AA, SMB |
| 供应商设备包: | SMBJ (DO-214AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMBJ5373B/TR13Roving Networks / Microchip Technology |
DIODE ZENER 68V 5W SMBJ |
|
1PMT4123/TR13Roving Networks / Microchip Technology |
DIODE ZENER 39V 1W DO216 |
|
BZT52B39-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 410MW SOD123 |
|
MMSZ5245B-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 15V 500MW SOD123 |
|
MMBZ5248B-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 225MW SOT23-3 |
|
1PMT5951BE3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 120V 3W DO216AA |
|
1M130ZHA0GTSC (Taiwan Semiconductor) |
DIODE ZENER 130V 1W DO204AL |
|
BZX55C6V2-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 500MW DO35 |
|
JAN1N4969DRoving Networks / Microchip Technology |
DIODE ZENER 30V 5W E AXIAL |
|
1N5259B-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 39V 500MW DO35 |
|
TZX11A-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 500MW DO35 |
|
BZX85C27-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 1.3W DO41 |
|
NTE5212AKNTE Electronics, Inc. |
DIODE ZENER 56V 10W DO4 |
