English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 56 V |
| 宽容: | ±2% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 135 Ohms |
| 电流 - 反向泄漏@ vr: | 100 nA @ 43 V |
| 电压 - 正向 (vf) (max) @ if: | 1.5 V @ 200 mA |
| 工作温度: | -65°C ~ 175°C |
| 安装类型: | Surface Mount |
| 包/箱: | SOD-80 Variant |
| 供应商设备包: | SOD-80 QuadroMELF |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SMZJ3800B-E3/52Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 1.5W DO214AA |
|
BZX84C11LT1Rochester Electronics |
DIODE ZENER 11V 225MW SOT23-3 |
|
1PMT5946A/TR7Roving Networks / Microchip Technology |
DIODE ZENER 75V 3W DO216AA |
|
1N755ATRRochester Electronics |
DIODE ZENER 7.5V 500MW DO35 |
|
JANTX1N3040C-1Roving Networks / Microchip Technology |
DIODE ZENER 68V 1W DO41 |
|
1N5991CRoving Networks / Microchip Technology |
DIODE ZENER 4.3V 500MW DO35 |
|
TFZGTR5.6BROHM Semiconductor |
DIODE ZENER 5.6V 500MW TUMD2 |
|
BZG04-160-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 200V 1.25W DO214AC |
|
JAN1N4462Roving Networks / Microchip Technology |
DIODE ZENER 7.5V 1.5W DO41 |
|
PDZVTFTR3.9BROHM Semiconductor |
DIODE ZENER 3.9V 1W PMDTM |
|
SMZJ3801BHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 1.5W DO214AA |
|
GDZ10B-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 200MW SOD323 |
|
CDLL5518ARoving Networks / Microchip Technology |
DIODE ZENER 3.3V 500MW DO213AB |
