English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 39 V |
| 宽容: | ±3% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 85 Ohms |
| 电流 - 反向泄漏@ vr: | 200 nA @ 30 V |
| 电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
| 工作温度: | 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-219AC |
| 供应商设备包: | DO-219AC (microSMF) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZX84C22-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 300MW SOT23-3 |
|
JAN1N4099UR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.8V DO213AA |
|
SMBJ5930CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 16V 2W SMBJ |
|
TZM5241B-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 500MW SOD80 |
|
CZRER52C3V9Comchip Technology |
DIODE ZENER 3.9V 150MW 0503 |
|
JANTXV1N4372C-1Roving Networks / Microchip Technology |
DIODE ZENER 3V 500MW DO35 |
|
HZS10NB3TD-ERochester Electronics |
DIODE ZENER 0.4W |
|
JAN1N4114DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 20V DO213AA |
|
PTZTE256.2BROHM Semiconductor |
DIODE ZENER 6.5V 1W PMDS |
|
BZD27C160PHRHGTSC (Taiwan Semiconductor) |
DIODE ZENER 162V 1W SUB SMA |
|
JAN1N5544C-1Roving Networks / Microchip Technology |
DIODE ZENER 28V 500MW DO35 |
|
BZT52B12S RRGTSC (Taiwan Semiconductor) |
DIODE ZENER 12V 200MW SOD323F |
|
TZX4V7D-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 500MW DO35 |
