English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 6.2 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 300 mW |
| 阻抗（最大）（zzt）: | 10 Ohms |
| 电流 - 反向泄漏@ vr: | 3 µA @ 4 V |
| 电压 - 正向 (vf) (max) @ if: | - |
| 工作温度: | -55°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
| 供应商设备包: | SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZT55B75-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 75V 500MW SOD80 |
|
JANTX1N3824DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 4.3V 1W DO213AB |
|
1N4761A R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 75V 1W DO204AL |
|
1N6019BRoving Networks / Microchip Technology |
DIODE ZENER 62V 500MW DO35 |
|
JANTX1N3036D-1Roving Networks / Microchip Technology |
DIODE ZENER 47V 1W DO41 |
|
DZ2J390M0LPanasonic |
DIODE ZENER 39V 200MW SMINI2 |
|
BZG05C11-HM3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 1.25W DO214AC |
|
TZMB3V9-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 500MW SOD80 |
|
1PMT4117C/TR7Roving Networks / Microchip Technology |
DIODE ZENER 25V 1W DO216 |
|
Z3SMC10Diotec Semiconductor |
DIODE ZENER 10V 3W SMC |
|
GDZ18B-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 200MW SOD323 |
|
CMPZ5246B TR PBFREECentral Semiconductor |
DIODE ZENER 16V 350MW SOT23 |
|
1PMT5941CE3/TR7Roving Networks / Microchip Technology |
DIODE ZENER 47V 3W DO216AA |
