类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Box (TB) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 47 V |
宽容: | ±2% |
功率 - 最大值: | 400 mW |
阻抗(最大)(zzt): | 170 Ohms |
电流 - 反向泄漏@ vr: | 50 nA @ 32.9 V |
电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
工作温度: | -65°C ~ 200°C |
安装类型: | Through Hole |
包/箱: | DO-204AH, DO-35, Axial |
供应商设备包: | ALF2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
SMBJ5936B/TR13Roving Networks / Microchip Technology |
DIODE ZENER 30V 2W SMBJ |
![]() |
BZX84W-B12FRochester Electronics |
DIODE ZENER 12V 275MW SOT323 |
![]() |
JAN1N975DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 39V 500MW DO213AA |
![]() |
BZG05C51-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 1.25W DO214AC |
![]() |
BZT52C6V2-G RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 6.2V 350MW SOD123 |
![]() |
1N3310RARoving Networks / Microchip Technology |
DIODE ZENER 11V 50W DO5 |
![]() |
MMSZ4706-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 19V 500MW SOD123 |
![]() |
BZG03C15Rochester Electronics |
DIODE ZENER 15V 1.5W SMA |
![]() |
BZT52C4V7-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.7V 410MW SOD123 |
![]() |
SML4750HE3/5AVishay General Semiconductor – Diodes Division |
DIODE ZENER 27V 1W DO214AC |
![]() |
JAN1N4492USRoving Networks / Microchip Technology |
DIODE ZENER 130V 1.5W D5A |
![]() |
2EZ19D5Microsemi |
DIODE ZENER 19V 2W DO204AL |
![]() |
BZT52C4V3-F2-0000HF |
ZENER DIODE 4.3V 0.5W SOD-123 |