English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 160 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 1.25 W |
| 阻抗（最大）（zzt）: | 1.1 kOhms |
| 电流 - 反向泄漏@ vr: | 1 µA @ 121.6 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | DO-214AC, SMA |
| 供应商设备包: | DO-214AC (SMA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CZRF52C2V7Comchip Technology |
DIODE ZENER 2.7V 200MW 1005 |
|
BZD27C47P-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 47V 800MW DO219AB |
|
MMSZ5228B RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 3.9V 500MW SOD123F |
|
JAN1N4467DUSRoving Networks / Microchip Technology |
DIODE ZENER 12V 1.5W D5A |
|
1N825AUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.2V 500MW DO213AA |
|
1PMT5931B/TR13Roving Networks / Microchip Technology |
DIODE ZENER 18V 3W DO216AA |
|
MMBZ5257BLT3GRochester Electronics |
DIODE ZENER 33V 225MW SOT23-3 |
|
BZD27C11P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 800MW DO219AB |
|
1N5743CRoving Networks / Microchip Technology |
DIODE ZENER 20V 500MW DO35 |
|
1N4747CPE3/TR8Roving Networks / Microchip Technology |
DIODE ZENER 20V 1W DO204AL |
|
SMAJ4740CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 10V 2W DO214AC |
|
PLZ5V1C-G3/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 5.23V 960MW DO219AC |
|
1N4755AHB0GTSC (Taiwan Semiconductor) |
DIODE ZENER 43V 1W DO204AL |
