类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 6.2 V |
宽容: | ±5% |
功率 - 最大值: | 3 W |
阻抗(最大)(zzt): | 2 Ohms |
电流 - 反向泄漏@ vr: | 200 µA @ 4 V |
电压 - 正向 (vf) (max) @ if: | 1.5 V @ 200 mA |
工作温度: | -55°C ~ 150°C |
安装类型: | Surface Mount |
包/箱: | DO-214AA, SMB |
供应商设备包: | DO-214AA (SMBJ) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
JAN1N4372DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 3V DO213AA |
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BZT52C11-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 410MW SOD123 |
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CDLL3827Roving Networks / Microchip Technology |
DIODE ZENER 5.6V 1W DO213AB |
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MMSZ5226C-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.3V 500MW SOD123 |
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JANTXV1N4963USRoving Networks / Microchip Technology |
DIODE ZENER 16V 5W D5B |
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BZX84B68-G3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 68V 300MW SOT23-3 |
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SMAJ5929B-TPMicro Commercial Components (MCC) |
DIODE ZENER 15V 1.5W DO214AC |
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BZD27B43P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 800MW DO219AB |
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BZX384B43-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 200MW SOD323 |
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SMBJ4736/TR13Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 2W SMBJ |
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MMSZ5229C-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 4.3V 500MW SOD123 |
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CMHZ5265B TR PBFREECentral Semiconductor |
DIODE ZENER 62V 500MW SOD123 |
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1PMT5950/TR7Roving Networks / Microchip Technology |
DIODE ZENER 110V 3W DO216AA |