English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 30 V |
| 宽容: | ±3% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 55 Ohms |
| 电流 - 反向泄漏@ vr: | 200 nA @ 23 V |
| 电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
| 工作温度: | 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-219AC |
| 供应商设备包: | DO-219AC (microSMF) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
PLZ22C-HG3_A/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 500MW DO219AC |
|
1N5231BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 5.1V 500MW DO213AA |
|
BZG04-24-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 1.25W DO214AC |
|
1N5946BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 75V 1.25W DO213AB |
|
BZG05C9V1-HM3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 9.1V 1.25W DO214AC |
|
BZT55C5V6-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.6V 500MW SOD80 |
|
1N4752CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 33V 1W DO204AL |
|
CZRA5940B-GComchip Technology |
DIODE ZENER 43V 1.5W DO214AC |
|
BZD27C6V8P-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 800MW DO219AB |
|
JAN1N3041B-1Roving Networks / Microchip Technology |
DIODE ZENER 75V 1W DO41 |
|
HZK4BTR-S-ERochester Electronics |
DIODE ZENER 0.5W |
|
GLL4741A-E3/97Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 1W MELF |
|
MMSZ20ET1GRochester Electronics |
DIODE ZENER |
