类型 | 描述 |
---|---|
系列: | - |
包裹: | Bag |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 160 V |
宽容: | ±5% |
功率 - 最大值: | 50 W |
阻抗(最大)(zzt): | 80 Ohms |
电流 - 反向泄漏@ vr: | - |
电压 - 正向 (vf) (max) @ if: | - |
工作温度: | -65°C ~ 175°C |
安装类型: | Chassis, Stud Mount |
包/箱: | DO-203AB, DO-5, Stud |
供应商设备包: | DO-5 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MTZJ7V5SA R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 7.04V 500MW DO34 |
|
BZG03B82-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 82V 1.25W DO214AC |
|
JAN1N5535BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 15V 500MW DO213AA |
|
1SMB5920BT3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 6.2V 3W SMB |
|
AMMSZ5261B-HFComchip Technology |
DIODE ZENER 47V 500MW SOD123 |
|
1SMA4751 R3GTSC (Taiwan Semiconductor) |
DIODE ZENER 30V 1.25W DO214AC |
|
CZRV5250B-GComchip Technology |
DIODE ZENER 20V 200MW SOD323 |
|
BZX55B3V3-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 3.3V 500MW DO35 |
|
JAN1N3016B-1Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 1W DO204AL |
|
1N3512ARoving Networks / Microchip Technology |
DIODE ZENER 5.6V 500MW DO35 |
|
1N4738PE3/TR8Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 1W DO204AL |
|
BZM55B22-TR3Vishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 500MW MICROMELF |
|
1N4737G R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 7.5V 1W DO204AL |