English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Cut Tape (CT)Tape & Box (TB) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 2.7 V |
| 宽容: | ±4% |
| 功率 - 最大值: | 500 mW |
| 阻抗（最大）（zzt）: | 100 Ohms |
| 电流 - 反向泄漏@ vr: | 20 µA @ 1 V |
| 电压 - 正向 (vf) (max) @ if: | 1.5 V @ 200 mA |
| 工作温度: | -55°C ~ 175°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AH, DO-35, Axial |
| 供应商设备包: | ALF2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ZM4747A-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 20V 1W DO213AB |
|
1N4771Roving Networks / Microchip Technology |
DIODE ZENER 9.1V 500MW DO35 |
|
CDLL4626Roving Networks / Microchip Technology |
DIODE ZENER 5.6V 500MW DO213AA |
|
BZX85C5V6Rochester Electronics |
DIODE ZENER 5.6V 1W 5% UNIDIR |
|
BZX884S-B18YLNexperia |
BZX884S-B18/SOD882BD/XSON2 |
|
JANTXV1N3025BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 16V 1W DO213AB |
|
1N5261C-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 47V 500MW DO35 |
|
2EZ62D5/TR8Microsemi |
DIODE ZENER 62V 2W DO204AL |
|
JAN1N5520DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 3.9V 500MW DO213AA |
|
1SMA4757 R3GTSC (Taiwan Semiconductor) |
DIODE ZENER 51V 1.25W DO214AC |
|
CZRF30VB-HFComchip Technology |
DIODE ZENER 30V 200MW 1005 |
|
SZ1SMB5932BT3GRochester Electronics |
DIODE ZENER 20V 3W SMB |
|
MMSZ4701-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 14V 500MW SOD123 |
