English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 11 V |
| 宽容: | ±2% |
| 功率 - 最大值: | 3 W |
| 阻抗（最大）（zzt）: | 5.5 Ohms |
| 电流 - 反向泄漏@ vr: | 1 µA @ 8.4 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -55°C ~ 150°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-216AA |
| 供应商设备包: | DO-216AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZD27B82P-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 82V 800MW DO219AB |
|
BZD27C160P-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 160V 800MW DO219AB |
|
1N5931APE3/TR8Roving Networks / Microchip Technology |
DIODE ZENER 18V 1.5W DO204AL |
|
MMSZ4700T1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 13V 500MW SOD123 |
|
TZS4697-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 10V 500MW SOD80 |
|
BZX84B12VLFHT116ROHM Semiconductor |
DIODE ZENER 12V 250MW SSD3 |
|
GDZ18B-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 200MW SOD323 |
|
BZD27C18P-M-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 800MW DO219AB |
|
1PGSMB5951HR5GTSC (Taiwan Semiconductor) |
DIODE ZENER 120V 3W DO214AA |
|
SZBZX84C12ET3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 12V 225MW SOT23-3 |
|
TZQ5227B-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 3.6V 500MW SOD80 |
|
1N5924BP/TR12Roving Networks / Microchip Technology |
DIODE ZENER 9.1V 1.5W DO204AL |
|
UFZVFHTE-173.6BROHM Semiconductor |
DIODE ZENER 3.6V 500MW UMD2 |
