类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 22.05 V |
宽容: | ±5.66% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 15 Ohms |
电流 - 反向泄漏@ vr: | 1 µA @ 16 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
包/箱: | DO-219AB |
供应商设备包: | Sub SMA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
NTE5113ANTE Electronics, Inc. |
DIODE ZENER 3.9V 5W DO35 |
![]() |
1N5744CRoving Networks / Microchip Technology |
DIODE ZENER 22V 500MW DO35 |
![]() |
NTE5007ANTE Electronics, Inc. |
DIODE ZENER 3.9V 500 MV DO35 |
![]() |
JAN1N4128CUR-1Roving Networks / Microchip Technology |
DIODE ZENER 60V DO213AA |
![]() |
BZX384C30-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 200MW SOD323 |
![]() |
UDZVTE-177.5BROHM Semiconductor |
DIODE ZENER 7.5V 200MW UMD2 |
![]() |
SMBJ5924B/TR13Roving Networks / Microchip Technology |
DIODE ZENER 9.1V 2W SMBJ |
![]() |
BZT52C22-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 22V 410MW SOD123 |
![]() |
BZT52B68-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 68V 410MW SOD123 |
![]() |
BZV55C33 L1GTSC (Taiwan Semiconductor) |
DIODE ZENER 33V 500MW MINI MELF |
![]() |
SMBJ5932AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 20V 2W SMBJ |
![]() |
CMDZ1L8 TR PBFREECentral Semiconductor |
DIODE ZENER 1.8V 250MW SOD323 |
![]() |
BZG03B30-HM3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 30V 1.25W DO214AC |