English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Military, MIL-PRF-19500/435 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 8.7 V |
| 宽容: | ±5% |
| 功率 - 最大值: | - |
| 阻抗（最大）（zzt）: | 200 Ohms |
| 电流 - 反向泄漏@ vr: | 500 nA @ 6.7 V |
| 电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
| 工作温度: | -65°C ~ 175°C |
| 安装类型: | Through Hole |
| 包/箱: | DO-204AH, DO-35, Axial |
| 供应商设备包: | DO-35 (DO-204AH) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JAN1N4987DRoving Networks / Microchip Technology |
DIODE ZENER 160V 5W E AXIAL |
|
BZT52C5V1-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 5.1V 410MW SOD123 |
|
TZX7V5B-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 500MW DO35 |
|
MMBZ5241C-G3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 11V 225MW SOT23-3 |
|
BZV55B8V2 L0GTSC (Taiwan Semiconductor) |
DIODE ZENER 8.2V 500MW MINI MELF |
|
1N751ARochester Electronics |
DIODE ZENER 5.1V 500MW DO35 |
|
BZX884-B11,315Nexperia |
DIODE ZENER 11V 250MW DFN1006-2 |
|
MMSZ5236B-E3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 500MW SOD123 |
|
BZT52HC2V7WF-7Zetex Semiconductors (Diodes Inc.) |
ZENER DIODE SOD123F T&R 3K |
|
1N5921BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 6.8V 1.25W DO213AB |
|
1N6000DRoving Networks / Microchip Technology |
DIODE ZENER 10V 500MW DO35 |
|
JAN1N967BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 18V 500MW DO213AA |
|
JAN1N983DUR-1Roving Networks / Microchip Technology |
DIODE ZENER 82V 500MW DO213AA |
