English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 110 V |
| 宽容: | ±20% |
| 功率 - 最大值: | 1 W |
| 阻抗（最大）（zzt）: | 450 Ohms |
| 电流 - 反向泄漏@ vr: | 500 nA @ 83.6 V |
| 电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
| 工作温度: | -55°C ~ 175°C |
| 安装类型: | Surface Mount |
| 包/箱: | DO-213AB, MELF |
| 供应商设备包: | DO-213AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
1N4756AURRoving Networks / Microchip Technology |
DIODE ZENER 47V 1W DO213AB |
|
1N4755G R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 43V 1W DO204AL |
|
1PMT4125C/TR13Roving Networks / Microchip Technology |
DIODE ZENER 47V 1W DO216 |
|
CZ5341B TR PBFREECentral Semiconductor |
DIODE ZENER 6.2V 5W DO201 |
|
MMSZ5234BT1Rochester Electronics |
DIODE ZENER 6.2V 500MW SOD123 |
|
BZT52C10S-F2-0000HF |
ZENER DIODE 10V 0.2W SOD-323 |
|
BZX55C6V8-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 500MW DO35 |
|
JAN1N3018C-1Roving Networks / Microchip Technology |
DIODE ZENER 8.2V 1W DO41 |
|
BZX79C24Rochester Electronics |
DIODE ZENER 24V 500MW DO35 |
|
CDLL755Roving Networks / Microchip Technology |
DIODE ZENER 7.5V 500MW DO213AB |
|
MTZJ2V2SB R0GTSC (Taiwan Semiconductor) |
DIODE ZENER 2.32V 500MW DO34 |
|
BZX55B4V7 A0GTSC (Taiwan Semiconductor) |
DIODE ZENER 4.7V 500MW DO35 |
|
1N4752A-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 33V 1.3W DO41 |
