类型 | 描述 |
---|---|
系列: | Military, MIL-PRF-19500/435 |
包裹: | Bulk |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 9.1 V |
宽容: | ±5% |
功率 - 最大值: | 500 mW |
阻抗(最大)(zzt): | 200 Ohms |
电流 - 反向泄漏@ vr: | 500 nA @ 7 V |
电压 - 正向 (vf) (max) @ if: | 1.1 V @ 200 mA |
工作温度: | -65°C ~ 175°C |
安装类型: | Surface Mount |
包/箱: | DO-213AA |
供应商设备包: | DO-213AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EDZVT2R24BROHM Semiconductor |
DIODE ZENER 24V 150MW EMD2 |
|
JANTXV1N3824AUR-1Roving Networks / Microchip Technology |
DIODE ZENER 4.3V 1W DO213AB |
|
BZT52-B9V1JNexperia |
DIODE ZENER 9.1V 590MW SOD123 |
|
TZX3V9C-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 3.9V 500MW DO35 |
|
BZD27C24P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 24V 800MW DO219AB |
|
BZD27C7V5PHR3GTSC (Taiwan Semiconductor) |
DIODE ZENER 7.45V 1W SUB SMA |
|
BZT52C33 RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 33V 500MW SOD123F |
|
BZD27B6V8P-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.8V 800MW DO219AB |
|
SMZJ3794BHE3_A/IVishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 1.5W DO214AA |
|
BZX84W-B30FNexperia |
DIODE ZENER 30V 275MW SOT323 |
|
BZG05B18-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 1.25W DO214AC |
|
PZU5.6B,115Nexperia |
DIODE ZENER 5.6V 310MW SOD323F |
|
PZU7.5B2,115Nexperia |
DIODE ZENER 7.5V 310MW SOD323F |