类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 4.7 V |
宽容: | ±5% |
功率 - 最大值: | 150 mW |
阻抗(最大)(zzt): | 78 Ohms |
电流 - 反向泄漏@ vr: | 5 µA @ 2 V |
电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
工作温度: | -55°C ~ 125°C |
安装类型: | Surface Mount |
包/箱: | 2-SMD, No Lead |
供应商设备包: | 0603/SOD-523F |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MMSZ4688T3GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 4.7V 500MW SOD123 |
|
MMBZ5241BLT1GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 11V 225MW SOT23-3 |
|
CLL5240B TR PBFREECentral Semiconductor |
DIODE ZENER 10V 500MW SOD80 |
|
MMSZ5245ET1Rochester Electronics |
DIODE ZENER 15V 500MW SOD123 |
|
JANTXV1N3028BUR-1Roving Networks / Microchip Technology |
DIODE ZENER 22V 1W DO213AB |
|
BZX585-C39,115Rochester Electronics |
DIODE ZENER 39V 300MW SOD523 |
|
CMPZ5229B TR PBFREECentral Semiconductor |
DIODE ZENER 4.3V 350MW SOT23 |
|
BZX79-C6V8,143Nexperia |
DIODE ZENER 6.8V 400MW ALF2 |
|
BZT52C75-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 75V 410MW SOD123 |
|
1N4757A-TRVishay General Semiconductor – Diodes Division |
DIODE ZENER 51V 1.3W DO41 |
|
JAN1N5529C-1Roving Networks / Microchip Technology |
DIODE ZENER 9.1V 500MW DO35 |
|
GDZ12B-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 200MW SOD323 |
|
BZT52B16-G RHGTSC (Taiwan Semiconductor) |
DIODE ZENER 16V 410MW SOD123 |