类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
电压 - 齐纳 (nom) (vz): | 56 V |
宽容: | ±2% |
功率 - 最大值: | 1 W |
阻抗(最大)(zzt): | 110 Ohms |
电流 - 反向泄漏@ vr: | 5 µA @ 42.6 V |
电压 - 正向 (vf) (max) @ if: | 1.2 V @ 200 mA |
工作温度: | -65°C ~ 150°C |
安装类型: | Through Hole |
包/箱: | DO-204AL, DO-41, Axial |
供应商设备包: | DO-204AL (DO-41) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NZ9F20VT5GSanyo Semiconductor/ON Semiconductor |
DIODE ZENER 20V 200MW SOD923 |
|
MMBZ5266B-E3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 68V 225MW SOT23-3 |
|
1N4582A-1Roving Networks / Microchip Technology |
DIODE ZENER 6.4V 500MW DO35 |
|
PLZ4V7B-G3/HVishay General Semiconductor – Diodes Division |
DIODE ZENER 4.68V 960MW DO219AC |
|
SMAJ4737AE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 7.5V 2W DO214AC |
|
TZM5223B-GS08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 2.7V 500MW SOD80 |
|
CDLL5257Roving Networks / Microchip Technology |
DIODE ZENER 33V 10MW DO213AB |
|
BZG04-62-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 75V 1.25W DO214AC |
|
JAN1N4626D-1Roving Networks / Microchip Technology |
DIODE ZENER 5.6V 500MW DO35 |
|
TLZ12A-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 12V 500MW SOD80 |
|
TZX16A-TAPVishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 500MW DO35 |
|
NTE5013T1NTE Electronics, Inc. |
DIODE ZENER 6.2V 500 MV DO35 |
|
1PMT4108CE3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 14V 1W DO216 |