English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 电压 - 齐纳 (nom) (vz): | 3.9 V |
| 宽容: | ±5% |
| 功率 - 最大值: | 225 mW |
| 阻抗（最大）（zzt）: | 90 Ohms |
| 电流 - 反向泄漏@ vr: | 3 µA @ 1 V |
| 电压 - 正向 (vf) (max) @ if: | 900 mV @ 10 mA |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
| 供应商设备包: | SOT-23-3 (TO-236) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BZG03B130-M3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 130V 1.25W DO214AC |
|
BZG05C43-M3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 43V 1.25W DO214AC |
|
JAN1N4571A-1Roving Networks / Microchip Technology |
DIODE ZENER 6.4V 500MW DO35 |
|
1PMT4119E3/TR13Roving Networks / Microchip Technology |
DIODE ZENER 28V 1W DO216 |
|
JAN1N4122C-1Roving Networks / Microchip Technology |
DIODE ZENER 36V DO35 |
|
BZT52B16-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 16V 410MW SOD123 |
|
BZD27C91PHMQGTSC (Taiwan Semiconductor) |
DIODE ZENER 90.5V 1W SUB SMA |
|
CZRFR52C6V2-HFComchip Technology |
DIODE ZENER 6.2V 200MW 1005 |
|
MMSZ5236C-HE3-08Vishay General Semiconductor – Diodes Division |
DIODE ZENER 7.5V 500MW SOD123 |
|
TZQ5248B-GS18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 18V 500MW SOD80 |
|
MMBZ5226ELT1GRochester Electronics |
DIODE ZENER 3.3V 225MW SOT23-3 |
|
PZU11BA,115Nexperia |
DIODE ZENER 11V 320MW SOD323 |
|
MMSZ5234C-HE3-18Vishay General Semiconductor – Diodes Division |
DIODE ZENER 6.2V 500MW SOD123 |
